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Solar Cells Reach Better Performance with Excimer Laser TEXT SIZE: A A A
Date:2019.05.22 Author:SHAN Xueyan Clicks:

Scientists with Hefei Institutes of Physical Science obtained better performance of perovskite solar cells (or PSCs) by excimer laser.

Organic–inorganic hybrid perovskite solar cells continue to attract considerable attention due to their excellent photovoltaic performance and low cost.

Organic-inorganic hybrid perovskite films are usually prepared through solution method at low temperature, which can not only construct rigid solar cells, but also have the natural advantages of developing flexible solar cells. However, the surface defects of perovskite films hinder the further improvement of the performance of PSCs.

At the same time, the preparation process of the common ETL of PSCs requires annealing and crystallization at 400 – 500 °C, which exceeds the temperature that the common flexible substrates can withstand, and restricts the development of flexible PSCs.

To address the above problems, scientists introduceed excimer laser into the research of perovskite solar cells (PSCs).

Through the study, they obtained low temperature excimer laser annealing (ELA) of gallium doped zinc oxide (GZO) electron transport layer (ETL) and rapid excimer laser surface modification (ELSM) of CH3NH3PbI3 films.

These works were completed by Prof. FANG Xiaodong’s study team with Anhui Institute of Optics and Fine Mechanics (AIOFM), Hefei Institutes of Physical Science.

The research is supported by the National Natural Science Foundation of China, CAS-JSPS Joint Research Projects, and the Key Laboratory of Photovoltaic and Energy Conservation Materials, Chinese Academy of Sciences.

Link to the paper: 1. Flash Surface Treatment of CH3NH3PbI3 Films Using 248 nm KrF Excimer Laser Enhances the Performance of Perovskite Solar Cells

                             2. Precision excimer laser annealed Ga-doped ZnO electron transport layers for perovskite solar cells

Figure 1. (a) Schematic illustration of the ELSM process employing the 248 nm KrF excimer laser, The J–V curves of the electron-only device utilized for estimating the trap densities of the (b) as-prepared-CH3NH3PbI3 film and (c) ELSM-CH3NH3PbI3 films, (d) Normalized TRPL spectra of the as-prepared- and ELSM-CH3NH3PbI3 films, (e) The J–V curves of the champion PSCs based on the as-prepared- and ELSM-CH3NH3PbI3 films. (Image by SHAN Xueyan)

Figure 2. (a) Schematic depicting the ELA system applied to GZO films, (b–c) Improvement of performance of perovskite solar cell based on GZO film after ELA.(Image by XIA Rui)



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